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AOTF18N65 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AOTF18N65

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 50 W

Предельно допустимое напряжение сток-исток (Uds): 650 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 4.5 V

Максимально допустимый постоянный ток стока (Id): 18 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 83 ns

Выходная емкость (Cd): 271 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.39 Ohm

Тип корпуса: TO-220F

Аналог (замена) для AOTF18N65

 

 

AOTF18N65 Datasheet (PDF)

1.1. aotf18n65l.pdf Size:359K _aosemi

AOTF18N65
AOTF18N65

AOTF18N65 650V,18A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOTF18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.39Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanch

1.2. aotf18n65.pdf Size:359K _aosemi

AOTF18N65
AOTF18N65

AOTF18N65 650V,18A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOTF18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.39Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanch

 5.1. aotf15b60d.pdf Size:733K _igbt_a

AOTF18N65
AOTF18N65

AOTF15B60D TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance t

5.2. aotf10b60d.pdf Size:728K _igbt_a

AOTF18N65
AOTF18N65

AOTF10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance

 5.3. aotf13n50.pdf Size:159K _aosemi

AOTF18N65
AOTF18N65

AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 13A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.51Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss a

5.4. aotf12n50.pdf Size:433K _aosemi

AOTF18N65
AOTF18N65

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.52Ω performance and robustness in popular AC-DC applications.By providing low RDS(o

 5.5. aotf14n50fd.pdf Size:232K _aosemi

AOTF18N65
AOTF18N65

AOT14N50FD/AOTF14N50FD 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT14N50FD/AOTF14N50FD have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 14A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.47Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and

5.6. aotf11s65.pdf Size:299K _aosemi

AOTF18N65
AOTF18N65

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399Ω performance and robustness in switching applications. Qg,typ 13.2nC By provi

5.7. aotf10n65.pdf Size:203K _aosemi

AOTF18N65
AOTF18N65

AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along

5.8. aotf190a60l.pdf Size:376K _aosemi

AOTF18N65
AOTF18N65

AOTF190A60L TM 600V, αMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V • Proprietary αMOS5TM technology • Low RDS(ON) IDM 80A • Optimized switching parameters for better EMI RDS(ON),max < 0.19Ω performance Qg,typ 34nC • Enhanced body diode for robustness and fast reverse recovery Eoss @ 400V 4.3mJ Applications 100% UIS Tested

5.9. aotf12n30.pdf Size:324K _aosemi

AOTF18N65
AOTF18N65

AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description Product Summary VDS 350V@150℃ The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 0.42Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along wi

5.10. aotf10b60d2.pdf Size:721K _aosemi

AOTF18N65
AOTF18N65

AOTF10B60D2 TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TJ=25°C) 1.55V of paralleling, minimal gate spike under high dV/dt conditions and resistance

5.11. aotf10t60p.pdf Size:284K _aosemi

AOTF18N65
AOTF18N65

AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology VDS @ Tj,max 700V • Low RDS(ON) IDM 40A • Low Ciss and Crss RDS(ON),max < 0.7Ω • High Current Capability Qg,typ 26nC • RoHS and Halogen Free Compliant Eoss @ 400V 3.5µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting

5.12. aotf16n50.pdf Size:160K _aosemi

AOTF18N65
AOTF18N65

AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 16A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss a

5.13. aotf10n60.pdf Size:375K _aosemi

AOTF18N65
AOTF18N65

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.75Ω performance and robustness in popular AC-DC applications.By providing low RDS(on

5.14. aotf11c60.pdf Size:470K _aosemi

AOTF18N65
AOTF18N65

AOT11C60/AOB11C60/AOTF11C60 600V,11A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700 The AOT11C60 & AOB11C60 & AOTF11C60 are fabricated using an advanced high voltage MOSFET IDM 80A process that is designed to deliver high levels of RDS(ON),max < 0.44Ω performance and robustness in popular AC-DC Qg,typ 30nC applications.By providing low RDS(on), Ciss and C

5.15. aotf15s60l.pdf Size:343K _aosemi

AOTF18N65
AOTF18N65

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 16nC By providing

5.16. aotf12n60fd.pdf Size:590K _aosemi

AOTF18N65
AOTF18N65

AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65Ω performance and robustness in popular AC-DC applications. By providing

5.17. aotf15s65l.pdf Size:302K _aosemi

AOTF18N65
AOTF18N65

AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 17.2nC By provid

5.18. aotf11s65l.pdf Size:300K _aosemi

AOTF18N65
AOTF18N65

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399Ω performance and robustness in switching applications. Qg,typ 13.2nC By provi

5.19. aotf12t50p.pdf Size:447K _aosemi

AOTF18N65
AOTF18N65

AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V • Low RDS(ON) IDM 48A • Low Ciss and Crss RDS(ON),max < 0.5Ω • High Current Capability Qg,typ 22nC • RoHS and Halogen Free Compliant Eoss @ 400V 4µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CC

5.20. aotf15s65.pdf Size:302K _aosemi

AOTF18N65
AOTF18N65

AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 17.2nC By provid

5.21. aotf10n50fd.pdf Size:330K _aosemi

AOTF18N65
AOTF18N65

AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 600V@150℃ The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 0.75Ω popular AC-DC applications. By providing low RDS(on), Ciss an

5.22. aotf14n50.pdf Size:258K _aosemi

AOTF18N65
AOTF18N65

AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.38Ω performance and robustness in popular AC-DC applications.By providing low RDS(on

5.23. aotf11n62.pdf Size:544K _aosemi

AOTF18N65
AOTF18N65

AOTF11N62 620V,11A N-Channel MOSFET General Description Product Summary VDS 720V@150℃ The AOTF11N62 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 11A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) < 0.65Ω DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed a

5.24. aotf10t60.pdf Size:468K _aosemi

AOTF18N65
AOTF18N65

AOT10T60/AOTF10T60 600V,10A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V The AOT10T60 & AOTF10T60 are fabricated using an advanced high voltage MOSFET process that is designed IDM 40A to deliver high levels of performance and robustness in RDS(ON),max < 0.7Ω popular AC-DC applications.By providing low RDS(on), Ciss Qg,typ 23nC and Crss along with guara

5.25. aotf11n60.pdf Size:545K _aosemi

AOTF18N65
AOTF18N65

AOT11N60/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOT11N60 & AOTF11N60 have been fabricated 700V@150℃ using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.65Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alon

5.26. aotf10n90.pdf Size:296K _aosemi

AOTF18N65
AOTF18N65

AOTF10N90 900V, 10A N-Channel MOSFET General Description Product Summary VDS 1000V@150℃ The AOTF10N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 10A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) < 0.98Ω DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed

5.27. aotf15b60d2.pdf Size:721K _aosemi

AOTF18N65
AOTF18N65

AOTF15B60D2 TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TJ=25°C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance

5.28. aotf15s60.pdf Size:343K _aosemi

AOTF18N65
AOTF18N65

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 16nC By providing

5.29. aotf12n60.pdf Size:450K _aosemi

AOTF18N65
AOTF18N65

AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.55Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss al

5.30. aotf12t60p.pdf Size:498K _aosemi

AOTF18N65
AOTF18N65

AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology VDS @ Tj,max 700V • Low RDS(ON) IDM 48A • Low Ciss and Crss RDS(ON),max < 0.52Ω • High Current Capability Qg,typ 33nC • RoHS and Halogen Free Compliant Eoss @ 400V 4.4µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED

5.31. aotf12n65.pdf Size:381K _aosemi

AOTF18N65
AOTF18N65

AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.72Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss a

5.32. aotf15b60d.pdf Size:738K _aosemi

AOTF18N65
AOTF18N65

AOTF15B60D TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance t

5.33. aotf11s60.pdf Size:292K _aosemi

AOTF18N65
AOTF18N65

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399Ω performance and robustness in switching applications. Qg,typ 11nC By providin

5.34. aotf11n70.pdf Size:218K _aosemi

AOTF18N65
AOTF18N65

AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET General Description Product Summary VDS 800V@150℃ The AOT11N70 & AOTF11N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.87Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss al

5.35. aotf12t60.pdf Size:233K _aosemi

AOTF18N65
AOTF18N65

AOTF12T60 600V,12A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V • Latest Trench Power AlphaMOS-II technology • Low RDS(ON) IDM 48A • Low Ciss and Crss RDS(ON),max < 0.52Ω • High Current Capability Qg,typ 33nC • RoHS and Halogen Free Compliant Eoss @ 400V 4.5µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and

5.36. aotf10b60d.pdf Size:732K _aosemi

AOTF18N65
AOTF18N65

AOTF10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance

5.37. aotf12t50pl.pdf Size:447K _aosemi

AOTF18N65
AOTF18N65

AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V • Low RDS(ON) IDM 48A • Low Ciss and Crss RDS(ON),max < 0.5Ω • High Current Capability Qg,typ 22nC • RoHS and Halogen Free Compliant Eoss @ 400V 4µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CC

Другие MOSFET... AOTF12T60 , AOTF12T60P , AOTF13N50 , AOTF14N50 , AOTF14N50FD , AOTF15S60 , AOTF15S65 , AOTF16N50 , IRFP450 , AOTF20C60 , AOTF20N40 , AOTF20N60 , AOTF20S60 , AOTF22N50 , AOTF240L , AOTF256L , AOTF25S65 .

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MOSFET: MDZ1N60UMH | MDV5524URH | MDV3605URH | MDV3604URH | MDV1595SURH | MDV1548URH | MDV1545URH | MDV1542URH | MDV1529EURH | MDV1528URH | MDV1527URH | MDV1526URH | MDV1525URH | MDV1524URH | MDV1523URH |
 


 

 

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