AOTF2610L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOTF2610L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 31 W
Предельно допустимое напряжение сток-исток (Uds): 60 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Пороговое напряжение включения Ugs(th): 2.5 V
Максимально допустимый постоянный ток стока (Id): 35 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 3.5 ns
Выходная емкость (Cd): 177 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0107 Ohm
Тип корпуса: TO-220F
AOTF2610L Datasheet (PDF)
1.1. aotf2610l.pdf 
Size:348K _aosemi
AOT2610L/AOTF2610L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2610L & AOTF2610L uses trench MOSFET 60V technology that is uniquely optimized to provide the most ID (at VGS=10V) 55A / 35A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 10.7mΩ conduction and switching power losses are minimized due RDS(ON) (at VGS=4.5V) < 13.5m
3.1. aotf2618l.pdf Size:367K _aosemi
AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 19mΩ Both conduction and switching power losses are RDS(ON) (at VGS=4.5V) < 25mΩ m
4.1. aotf2606l.pdf Size:349K _aosemi
AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗) Both conduction and switching power losses are minimized due to a
4.2. aotf262l.pdf Size:313K _aosemi
AOTF262L 60V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology 60V • Low RDS(ON) ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 3.6mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=6V) < 4.1mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters
4.3. aotf266l.pdf Size:405K _aosemi
AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS The AOT266L & AOB266L & AOTF266L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ∗) Both conduction and switching power losses are RDS(ON) (at VGS=6V
4.4. aotf260l.pdf Size:255K _aosemi
AOTF260L 60V N-Channel MOSFET General Description Product Summary VDS The AOTF260L uses Trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 92A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 2.6mΩ switching power losses are minimized due to an extremely RDS(ON) (at VGS=6V) < 3.0mΩ low combinati
Другие MOSFET... AOTF20N60 , AOTF20S60 , AOTF22N50 , AOTF240L , AOTF256L , AOTF25S65 , AOTF2606L , AOTF260L , IRFZ44V , AOTF2618L , AOTF262L , AOTF266L , AOTF27S60 , AOTF288L , AOTF2910L , AOTF2916L , AOTF2918L .
Список транзисторов
Обновления
MOSFET: MTBA6C15Q8 | MTBA6C15J4 | MTBA6C12Q8 | MTBA5C10V8 | MTB75N05HDT4 | MTB6D0N03BH8 | MTB60P15H8 | MTB5D0P03Q8 | MTB5D0P03J3 | MTB50P03HDLT4G | MTB50P03HDLT4 | MTB50P03HDLG | MTB3D0N03BH8 | MTB30P06VT4G | MTB30P06VT4 |