AOTF3N80 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOTF3N80
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 35 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 2.8 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 25 ns
Выходная емкость (Cd): 39 pf
Сопротивление сток-исток открытого транзистора (Rds): 4.8 Ohm
Тип корпуса: TO-220F
AOTF3N80 Datasheet (PDF)
aotf3n80.pdf
AOTF3N80800V, 2.8A N-Channel MOSFETGeneral Description Product Summary VDS900V@150The AOTF3N80 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.8Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)
aotf3n80.pdf
isc N-Channel MOSFET Transistor AOTF3N80FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =4.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aotf3n50.pdf
AOT3N50/AOTF3N50500V, 3A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT3N50 & AOTF3N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 3Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aotf3n100.pdf
AOT3N100/AOTF3N1001000V,2.8A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT3N100 & AOTF3N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
aotf3n90.pdf
AOTF3N90900V, 2.4A N-Channel MOSFETGeneral Description Product Summary VDS1000V@150The AOTF3N90 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.4Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)
aotf3n50.pdf
isc N-Channel MOSFET Transistor AOTF3N50FEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aotf3n100.pdf
isc N-Channel MOSFET Transistor AOTF3N100FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
aotf3n90.pdf
isc N-Channel MOSFET Transistor AOTF3N90FEATURESDrain Current I =2.4A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =6.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
