Справочник MOSFET. AOTF7N60FD

 

AOTF7N60FD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOTF7N60FD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 39 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 20 nC
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 86 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.45 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для AOTF7N60FD

 

 

AOTF7N60FD Datasheet (PDF)

 ..1. Size:339K  aosemi
 aotf7n60fd.pdf

AOTF7N60FD AOTF7N60FD

AOTF7N60FD600V, 7A N-Channel MOSFET with Fast Recovery DiodeGeneral Description Product Summary VDS700V@150The AOTF7N60FD has been fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 7Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 ..2. Size:252K  inchange semiconductor
 aotf7n60fd.pdf

AOTF7N60FD AOTF7N60FD

isc N-Channel MOSFET Transistor AOTF7N60FDFEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.45(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 6.1. Size:498K  aosemi
 aotf7n60.pdf

AOTF7N60FD AOTF7N60FD

AOT7N60/AOTF7N60600V,7A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT7N60 & AOTF7N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 6.2. Size:252K  inchange semiconductor
 aotf7n60.pdf

AOTF7N60FD AOTF7N60FD

isc N-Channel MOSFET Transistor AOTF7N60FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 7.1. Size:408K  aosemi
 aotf7n65.pdf

AOTF7N60FD AOTF7N60FD

AOT7N65/AOTF7N65650V, 7A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT7N65 & AOTF7N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 7.2. Size:252K  inchange semiconductor
 aotf7n65.pdf

AOTF7N60FD AOTF7N60FD

isc N-Channel MOSFET Transistor AOTF7N65FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =1.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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