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AOTF7T60P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOTF7T60P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 38 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 42 ns
   Cossⓘ - Выходная емкость: 36 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для AOTF7T60P

 

 

AOTF7T60P Datasheet (PDF)

 ..1. Size:234K  aosemi
aotf7t60p.pdf

AOTF7T60P
AOTF7T60P

AOTF7T60P600V,7A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 28A Low Ciss and Crss RDS(ON),max

 6.1. Size:231K  aosemi
aotf7t60.pdf

AOTF7T60P
AOTF7T60P

AOTF7T60600V,7A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Latest Trench Power AlphaMOS-II technology Low RDS(ON) IDM 28A Low Ciss and Crss RDS(ON),max

 9.1. Size:540K  aosemi
aotf7n70.pdf

AOTF7T60P
AOTF7T60P

AOT7N70/AOTF7N70700V, 7A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT7N70 & AOTF7N70 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.2. Size:302K  aosemi
aotf7s65.pdf

AOTF7T60P
AOTF7T60P

AOT7S65/AOB7S65/AOTF7S65TM650V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT7S65 & AOB7S65 & AOTF7S65 have beenfabricated using the advanced MOSTM high voltage IDM 30Aprocess that is designed to deliver high levels of RDS(ON),max 0.65performance and robustness in switching applications. Qg,typ 9.2nCBy providing low

 9.3. Size:498K  aosemi
aotf7n60.pdf

AOTF7T60P
AOTF7T60P

AOT7N60/AOTF7N60600V,7A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT7N60 & AOTF7N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.4. Size:646K  aosemi
aotf7s60.pdf

AOTF7T60P
AOTF7T60P

AOT7S60/AOB7S60/AOTF7S60TM600V 7A MOS Power TransistorGeneral Description Product SummaryVDS @ Tj,max 700VThe AOT7S60 & AOB7S60 & AOTF7S60 have beenfabricated using the advanced MOSTM high voltage IDM 33Aprocess that is designed to deliver high levels of RDS(ON),max 0.6performance and robustness in switching applications. Qg,typ 8.2nCBy providing low RD

 9.5. Size:287K  aosemi
aotf7s60-l.pdf

AOTF7T60P
AOTF7T60P

AOT7S60/AOB7S60/AOTF7S60TM600V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT7S60 & AOB7S60 & AOTF7S60 have beenfabricated using the advanced MOSTM high voltage IDM 33Aprocess that is designed to deliver high levels of RDS(ON),max 0.6performance and robustness in switching applications. Qg,typ 8.2nCBy providing low R

 9.6. Size:339K  aosemi
aotf7n60fd.pdf

AOTF7T60P
AOTF7T60P

AOTF7N60FD600V, 7A N-Channel MOSFET with Fast Recovery DiodeGeneral Description Product Summary VDS700V@150The AOTF7N60FD has been fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 7Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 9.7. Size:408K  aosemi
aotf7n65.pdf

AOTF7T60P
AOTF7T60P

AOT7N65/AOTF7N65650V, 7A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT7N65 & AOTF7N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.8. Size:504K  aosemi
aotf780a70l.pdf

AOTF7T60P
AOTF7T60P

AOTF780A70L/AOT780A70L/AOB780A70LTM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max

 9.9. Size:244K  inchange semiconductor
aotf7n70.pdf

AOTF7T60P
AOTF7T60P

isc N-Channel MOSFET Transistor AOTF7N70FEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.10. Size:252K  inchange semiconductor
aotf7s65.pdf

AOTF7T60P
AOTF7T60P

isc N-Channel MOSFET Transistor AOTF7S65FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.11. Size:252K  inchange semiconductor
aotf7n60.pdf

AOTF7T60P
AOTF7T60P

isc N-Channel MOSFET Transistor AOTF7N60FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.12. Size:252K  inchange semiconductor
aotf7s60.pdf

AOTF7T60P
AOTF7T60P

isc N-Channel MOSFET Transistor AOTF7S60FEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.13. Size:252K  inchange semiconductor
aotf7n60fd.pdf

AOTF7T60P
AOTF7T60P

isc N-Channel MOSFET Transistor AOTF7N60FDFEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.45(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.14. Size:252K  inchange semiconductor
aotf7n65.pdf

AOTF7T60P
AOTF7T60P

isc N-Channel MOSFET Transistor AOTF7N65FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =1.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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