AOTF8N80 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOTF8N80
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7.4 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 26 nC
trⓘ - Время нарастания: 51 ns
Cossⓘ - Выходная емкость: 101 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.63 Ohm
Тип корпуса: TO-220F
AOTF8N80 Datasheet (PDF)
aotf8n80.pdf
AOT8N80/AOTF8N80800V, 7.4A N-Channel MOSFETGeneral Description Product Summary VDS900V@150The AOT8N80 & AOTF8N80 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aotf8n80.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOTF8N80FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM
aotf8n50.pdf
AOT8N50/AOTF8N50500V, 8A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT8N50 & AOTF8N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aotf8n60.pdf
AOT8N60/AOTF8N60600V,8A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT8N60 & AOTF8N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aot8n50 aotf8n50.pdf
AOT8N50/AOTF8N50500V, 9A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT8N50 & AOTF8N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aotf8n65.pdf
AOT8N65/AOTF8N65650V, 8A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT8N65 & AOTF8N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aotf8n50.pdf
isc N-Channel MOSFET Transistor AOTF8N50FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
aotf8n60.pdf
isc N-Channel MOSFET Transistor AOTF8N60FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aotf8n65.pdf
isc N-Channel MOSFET Transistor AOTF8N65FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F