Справочник MOSFET. AOTF9N50

 

AOTF9N50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOTF9N50
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 38.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.6 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 23.6 nC
   trⓘ - Время нарастания: 47 ns
   Cossⓘ - Выходная емкость: 93 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для AOTF9N50

 

 

AOTF9N50 Datasheet (PDF)

 ..1. Size:159K  aosemi
 aotf9n50.pdf

AOTF9N50 AOTF9N50

AOT9N50/AOTF9N50500V, 9A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT9N50 & AOTF9N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:252K  inchange semiconductor
 aotf9n50.pdf

AOTF9N50 AOTF9N50

isc N-Channel MOSFET Transistor AOTF9N50FEATURESDrain Current I = 9.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 8.1. Size:403K  1
 aot9n70 aotf9n70 aob9n70.pdf

AOTF9N50 AOTF9N50

AOT9N70/AOTF9N70/AOB9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 & AOB9N70 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 8.2. Size:528K  aosemi
 aotf9n70.pdf

AOTF9N50 AOTF9N50

AOT9N70/AOTF9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 8.3. Size:295K  aosemi
 aotf9n90.pdf

AOTF9N50 AOTF9N50

AOTF9N90900V, 9A N-Channel MOSFETGeneral Description Product Summary VDS1000V@150The AOTF9N90 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 9Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 8.4. Size:252K  inchange semiconductor
 aotf9n70.pdf

AOTF9N50 AOTF9N50

isc N-Channel MOSFET Transistor AOTF9N70FEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 8.5. Size:252K  inchange semiconductor
 aotf9n70l.pdf

AOTF9N50 AOTF9N50

isc N-Channel MOSFET Transistor AOTF9N70LFEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 8.6. Size:251K  inchange semiconductor
 aotf9n90.pdf

AOTF9N50 AOTF9N50

isc N-Channel MOSFET Transistor AOTF9N90FEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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