Справочник MOSFET. AOW10N65

 

AOW10N65 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOW10N65
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 61 ns
   Cossⓘ - Выходная емкость: 118 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
   Тип корпуса: TO-262

 Аналог (замена) для AOW10N65

 

 

AOW10N65 Datasheet (PDF)

 ..1. Size:341K  aosemi
 aow10n65.pdf

AOW10N65 AOW10N65

AOW10N65/AOWF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW10N65/AOWF10N65 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 10Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 ..2. Size:299K  inchange semiconductor
 aow10n65.pdf

AOW10N65 AOW10N65

isc N-Channel MOSFET Transistor AOW10N65FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.1. Size:245K  aosemi
 aow10n60.pdf

AOW10N65 AOW10N65

AOW10N60/AOWF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOW10N60 & AOWF10N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 7.2. Size:496K  aosemi
 aow10n60 aowf10n60.pdf

AOW10N65 AOW10N65

AOW10N60/AOWF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOW10N60 & AOWF10N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 7.3. Size:298K  inchange semiconductor
 aow10n60.pdf

AOW10N65 AOW10N65

isc N-Channel MOSFET Transistor AOW10N60FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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