Справочник MOSFET. AOW12N60

 

AOW12N60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOW12N60
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 278 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 164 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
   Тип корпуса: TO-262

 Аналог (замена) для AOW12N60

 

 

AOW12N60 Datasheet (PDF)

 ..1. Size:262K  aosemi
 aow12n60.pdf

AOW12N60 AOW12N60

AOW12N60/AOWF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N60 & AOWF12N60 have been fabricated 700V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and

 ..2. Size:298K  inchange semiconductor
 aow12n60.pdf

AOW12N60 AOW12N60

isc N-Channel MOSFET Transistor AOW12N60FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 7.1. Size:240K  aosemi
 aow12n65.pdf

AOW12N60 AOW12N60

AOW12N65/AOWF12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW12N65 & AOWF12N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 7.2. Size:298K  inchange semiconductor
 aow12n65.pdf

AOW12N60 AOW12N60

isc N-Channel MOSFET Transistor AOW12N65FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.72(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.1. Size:281K  aosemi
 aow12n50.pdf

AOW12N60 AOW12N60

AOW12N50/AOWF12N50500V, 12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N50 & AOWF12N50 have been fabricated 600V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and

 8.2. Size:298K  inchange semiconductor
 aow12n50.pdf

AOW12N60 AOW12N60

isc N-Channel MOSFET Transistor AOW12N50FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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