AOWF11N60 - описание и поиск аналогов

 

AOWF11N60. Аналоги и основные параметры

Наименование производителя: AOWF11N60

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 27.8 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 58 ns

Cossⓘ - Выходная емкость: 146 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm

Тип корпуса: TO-262F

Аналог (замена) для AOWF11N60

- подборⓘ MOSFET транзистора по параметрам

 

AOWF11N60 даташит

 ..1. Size:447K  aosemi
 aowf11n60.pdf pdf_icon

AOWF11N60

AOWF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOWF11N60 has been fabricated using an 700V@150 advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 7.1. Size:299K  aosemi
 aowf11n70.pdf pdf_icon

AOWF11N60

AOWF11N70 700V,11A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOWF11N70 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 11A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 8.1. Size:259K  aosemi
 aowf11s65.pdf pdf_icon

AOWF11N60

AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg

 8.2. Size:259K  aosemi
 aow11s65 aowf11s65.pdf pdf_icon

AOWF11N60

AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AOW482 , AOW4S60 , AOW7S60 , AOW7S65 , AOWF10N60 , AOWF10N65 , AOWF10T60P , AOWF11C60 , 2N7000 , AOWF11N70 , AOWF11S60 , AOWF11S65 , AOWF12N50 , AOWF12N60 , AOWF12N65 , AOWF12T60P , AOWF14N50 .

 

 

 

 

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