APT10025JLC - параметры транзистора MOSFET, его аналоги, datasheet

APT10025JLC Datasheet (PDF)

..1. Size:34K apt
apt10025jlc.pdf pdf_icon

APT10025JLC1000V 34A 0.250WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,"UL Recognized"delivers exceptionally fast switching speeds.ISOT

5.1. Size:73K apt
apt10025jvfr.pdf pdf_icon

APT10025JVFR1000V 34A 0.250POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

5.2. Size:71K apt
apt10025jvr.pdf pdf_icon

APT10025JVR1000V 34A 0.250POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

6.1. Size:35K apt
apt10025pvr.pdf pdf_icon

APT10025PVR1000V 33A 0.250POWER MOS VP-PackPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

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