Справочник MOSFET. APT10025JLC

 

APT10025JLC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT10025JLC
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 700 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 34 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 330 nC
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 1370 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.25 Ohm
   Тип корпуса: SOT227

 Аналог (замена) для APT10025JLC

 

 

APT10025JLC Datasheet (PDF)

 ..1. Size:34K  apt
 apt10025jlc.pdf

APT10025JLC APT10025JLC

APT10025JLC1000V 34A 0.250WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,"UL Recognized"delivers exceptionally fast switching speeds.ISOT

 5.1. Size:73K  apt
 apt10025jvfr.pdf

APT10025JLC APT10025JLC

APT10025JVFR1000V 34A 0.250POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

 5.2. Size:71K  apt
 apt10025jvr.pdf

APT10025JLC APT10025JLC

APT10025JVR1000V 34A 0.250POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 6.1. Size:35K  apt
 apt10025pvr.pdf

APT10025JLC APT10025JLC

APT10025PVR1000V 33A 0.250POWER MOS VP-PackPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

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