Справочник MOSFET. APT10026JFLL

 

APT10026JFLL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT10026JFLL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 595 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 294 nC
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 1270 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.26 Ohm
   Тип корпуса: SOT227

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APT10026JFLL Datasheet (PDF)

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 apt10026jfll.pdf

APT10026JFLL APT10026JFLL

APT10026JFLL1000V 30A 0.140WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wi

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 apt10026jll.pdf

APT10026JFLL APT10026JFLL

APT10026JLL1000V 30A 0.260WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

 5.2. Size:63K  apt
 apt10026jn.pdf

APT10026JFLL APT10026JFLL

DGAPT10026JN 1000V 33A 0.26S"UL Recognized" File No. E145592 (S)ISOTOPPOWER MOS IV SINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 10026JN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C33AmpsIDM, lLM Pulse

 6.1. Size:64K  apt
 apt10026l2ll.pdf

APT10026JFLL APT10026JFLL

APT10026L2LL1000V 38A 0.260WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent

 6.2. Size:65K  apt
 apt10026l2fll.pdf

APT10026JFLL APT10026JFLL

APT10026L2FLL1000V 38A 0.260WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speed

 6.3. Size:102K  apt
 apt10026l2fllg.pdf

APT10026JFLL APT10026JFLL

APT10026L2FLL1000V 38A 0.260R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-ChannelMaxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally

 6.4. Size:65K  apt
 apt10026l2fl.pdf

APT10026JFLL APT10026JFLL

APT10026L2FLL1000V 38A 0.260WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speed

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