APT10026JFLL. Аналоги и основные параметры
Наименование производителя: APT10026JFLL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 595 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 1270 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.26 Ohm
Тип корпуса: SOT227
Аналог (замена) для APT10026JFLL
- подборⓘ MOSFET транзистора по параметрам
APT10026JFLL даташит
apt10026jfll.pdf
APT10026JFLL 1000V 30A 0.140W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi
apt10026jll.pdf
APT10026JLL 1000V 30A 0.260W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's
apt10026jn.pdf
D G APT10026JN 1000V 33A 0.26 S "UL Recognized" File No. E145592 (S) ISOTOP POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT Symbol Parameter 10026JN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 33 Amps IDM, lLM Pulse
apt10026l2ll.pdf
APT10026L2LL 1000V 38A 0.260W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent
Другие MOSFET... 2SK1070 , 2SJ450 , APT1001RBLC , APT1001RBVFR , APT1001RSLC , APT10021JFLL , APT10021JLL , APT10025JLC , AO3407 , APT10026JLL , APT10026L2FL , APT10026L2FLL , APT10026L2LL , APT10030L2VFR , APT10030L2VR , APT10035B2FLL , APT10035LFLL .
History: SMF16N65 | H5N60D | ASDM4614S | HM4444
History: SMF16N65 | H5N60D | ASDM4614S | HM4444
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