APT10035B2FLL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT10035B2FLL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 690 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 28 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 203 nC
trⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 870 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
Тип корпуса: TMAX
- подбор MOSFET транзистора по параметрам
APT10035B2FLL Datasheet (PDF)
apt10035b2fll.pdf

APT10035B2FLLAPT10035LFLL1000V 28A 0.350WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with excepti
apt10035b2fllg apt10035lfllg.pdf

APT10035B2FLL(G)APT10035LFLL(G)1000V 28A 0.37 RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching
apt10035b2llg apt10035lllg.pdf

APT10035B2LLAPT10035LLL1000V 28A 0.350RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesal
apt10035b2ll.pdf

APT10035B2LLAPT10035LLL1000V 28A 0.350WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: JFPC2N80C | JCS640VH | APT5012JN | KP743V | IPU09N03LA
History: JFPC2N80C | JCS640VH | APT5012JN | KP743V | IPU09N03LA



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