Справочник MOSFET. APT10035LLL

 

APT10035LLL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT10035LLL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 690 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 900 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
   Тип корпуса: TO264

 Аналог (замена) для APT10035LLL

 

 

APT10035LLL Datasheet (PDF)

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 apt10035b2llg apt10035lllg.pdf

APT10035LLL APT10035LLL

APT10035B2LLAPT10035LLL1000V 28A 0.350RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesal

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APT10035LLL APT10035LLL

APT10035B2FLL(G)APT10035LFLL(G)1000V 28A 0.37 RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching

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 apt10035jfll.pdf

APT10035LLL APT10035LLL

APT10035JFLL1000V 25A 0.350WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wi

 6.2. Size:60K  apt
 apt10035jll.pdf

APT10035LLL APT10035LLL

APT10035JLL1000V 25A 0.350 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

 6.3. Size:63K  apt
 apt10035b2fll.pdf

APT10035LLL APT10035LLL

APT10035B2FLLAPT10035LFLL1000V 28A 0.350WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with excepti

 6.4. Size:69K  apt
 apt10035b2ll.pdf

APT10035LLL APT10035LLL

APT10035B2LLAPT10035LLL1000V 28A 0.350WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

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