APT10035JLL. Аналоги и основные параметры
Наименование производителя: APT10035JLL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 540 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 870 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
Тип корпуса: SOT227
Аналог (замена) для APT10035JLL
- подборⓘ MOSFET транзистора по параметрам
APT10035JLL даташит
apt10035jll.pdf
APT10035JLL 1000V 25A 0.350 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's
apt10035jfll.pdf
APT10035JFLL 1000V 25A 0.350W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi
apt10035b2fll.pdf
APT10035B2FLL APT10035LFLL 1000V 28A 0.350W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with excepti
apt10035b2llg apt10035lllg.pdf
APT10035B2LL APT10035LLL 1000V 28A 0.350 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses al
Другие MOSFET... APT10026L2LL , APT10030L2VFR , APT10030L2VR , APT10035B2FLL , APT10035LFLL , APT10035B2LL , APT10035LLL , APT10035JFLL , IRFB31N20D , APT1003RSLL , APT1003RBLL , APT1003RKLL , APT4025BN , APT40M90JN , APT10040B2VFR , APT10040B2VR , APT10045B2FLL .
History: AP2N050H | AOTF4126 | RW1E015RP
History: AP2N050H | AOTF4126 | RW1E015RP
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