APT10040B2VR. Аналоги и основные параметры
Наименование производителя: APT10040B2VR
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 625 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 690 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
Тип корпуса: TMAX
Аналог (замена) для APT10040B2VR
- подборⓘ MOSFET транзистора по параметрам
APT10040B2VR даташит
apt10040b2vr.pdf
APT10040B2VR APT10040LVR 1000V 25A 0.400W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati
apt10040b2vfr.pdf
APT10040B2VFR APT10040LVFR 1000V 25A 0.400W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical
apt10040b2vfrg apt10040lvfrg.pdf
APT10040B2VFR APT10040LVFR 1000V 25A 0.400W B2VFR FREDFET POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identica
apt10040lvr.pdf
APT10040B2VR APT10040LVR 1000V 25A 0.400W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati
Другие MOSFET... APT10035JFLL , APT10035JLL , APT1003RSLL , APT1003RBLL , APT1003RKLL , APT4025BN , APT40M90JN , APT10040B2VFR , IRLB3034 , APT10045B2FLL , APT10045B2LL , APT10045JFLL , APT10045JLL , APT1004R2KN , APT10050B2LC , APT10050B2VFR , APT10050JLC .
History: CRSM053N08N | APT10045B2LL
History: CRSM053N08N | APT10045B2LL
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