Справочник MOSFET. APT10045B2LL

 

APT10045B2LL Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APT10045B2LL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 570 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 730 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.45 Ohm
   Тип корпуса: TMAX
     - подбор MOSFET транзистора по параметрам

 

APT10045B2LL Datasheet (PDF)

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APT10045B2LL

APT10045B2LLAPT10045LLL1000V 23A 0.450WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

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APT10045B2LL

APT10045B2LLAPT10045LLL1000V 23A 0.450RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesal

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APT10045B2LL

APT10045B2FLL APT10045LFLL 1000V 23A 0.4 RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching l

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APT10045B2LL

APT10045B2FLLAPT10045LFLL1000V 23A 0.450WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with excepti

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History: HGD750N15M | MTE130N20FP | TK3A60DA | TTP118N08A | QS8K13 | NTB5404N

 

 
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