APT10078BLL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT10078BLL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 400 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 430 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.78 Ohm
Тип корпуса: TO247
- подбор MOSFET транзистора по параметрам
APT10078BLL Datasheet (PDF)
apt10078bll.pdf

APT10078BLLAPT10078SLL1000V 14A 0.780WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switchi
apt10078bllg apt10078sllg.pdf

APT10078BLLAPT10078SLL1000V 14A 0.780R POWER MOS 7 MOSFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with e
apt10078bfll.pdf

APT10078BFLLAPT10078SFLL1000V 14A 0.780WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally
apt10078bfllg apt10078sfllg.pdf

APT10078BFLLAPT10078SFLL1000V 14A 0.780BFLLRFREDFET POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching los
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: STU13NM60N | 2N6760JANTXV | RU7550S | STP20NM60FP | FQD6N40CTM | AUIRFZ34N | IRLML9301TRPBF
History: STU13NM60N | 2N6760JANTXV | RU7550S | STP20NM60FP | FQD6N40CTM | AUIRFZ34N | IRLML9301TRPBF



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