Справочник MOSFET. APT20M10JLL

 

APT20M10JLL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: APT20M10JLL

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 690 W

Предельно допустимое напряжение сток-исток (Uds): 200 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 180 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 35 ns

Выходная емкость (Cd): 4330 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.01 Ohm

Тип корпуса: SOT227

Аналог (замена) для APT20M10JLL

 

 

APT20M10JLL Datasheet (PDF)

1.1. apt20m10jll 1.pdf Size:61K _apt

APT20M10JLL
APT20M10JLL

APT20M10JLL 200V 185A 0.010 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

1.2. apt20m10jll.pdf Size:69K _apt

APT20M10JLL
APT20M10JLL

APT20M10JLL 200V 185A 0.010W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

 1.3. apt20m10jfll.pdf Size:63K _apt

APT20M10JLL
APT20M10JLL

APT20M10JFLL 200V 185A 0.010W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi

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