Справочник MOSFET. APT20M20B2LL

 

APT20M20B2LL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT20M20B2LL
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 570 W
   Предельно допустимое напряжение сток-исток |Uds|: 200 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 5 V
   Максимально допустимый постоянный ток стока |Id|: 100 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 22 ns
   Выходная емкость (Cd): 1990 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
   Тип корпуса: TMAX

 Аналог (замена) для APT20M20B2LL

 

 

APT20M20B2LL Datasheet (PDF)

 ..1. Size:69K  apt
apt20m20b2ll.pdf

APT20M20B2LL APT20M20B2LL

APT20M20B2LLAPT20M20LLL200V 100A 0.020WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

 ..2. Size:375K  inchange semiconductor
apt20m20b2ll.pdf

APT20M20B2LL APT20M20B2LL

isc N-Channel MOSFET Transistor APT20M20B2LLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.02(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 0.1. Size:160K  apt
apt20m20b2llg apt20m20lllg.pdf

APT20M20B2LL APT20M20B2LL

APT20M20B2LLAPT20M20LLL200V 100A 0.020R POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong wi

 4.1. Size:71K  apt
apt20m20b2fll.pdf

APT20M20B2LL APT20M20B2LL

APT20M20B2FLLAPT20M20LFLL200V 100A 0.020WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with excepti

 4.2. Size:157K  apt
apt20m20b2fllg apt20m20lfllg.pdf

APT20M20B2LL APT20M20B2LL

APT20M20B2FLLAPT20M20LFLL200V 100A 0.020RFREDFET POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching loss

 4.3. Size:375K  inchange semiconductor
apt20m20b2fll.pdf

APT20M20B2LL APT20M20B2LL

isc N-Channel MOSFET Transistor APT20M20B2FLLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.02(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: APT20M34BFLL

 

 
Back to Top