APT20M34BFLL. Аналоги и основные параметры
Наименование производителя: APT20M34BFLL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 400 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 74 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 18 ns
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.034 Ohm
Тип корпуса: TO247
Аналог (замена) для APT20M34BFLL
- подборⓘ MOSFET транзистора по параметрам
APT20M34BFLL даташит
apt20m34bfll.pdf
APT20M34BFLL APT20M34SFLL 200V 74A 0.034W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally f
apt20m34bfll.pdf
isc N-Channel MOSFET Transistor APT20M34BFLL FEATURES Drain Current I = 74A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.034 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p
apt20m34bfllg apt20m34sfllg.pdf
APT20M34BFLL APT20M34SFLL 200V 74A 0.034 BFLL R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL
apt20m34bll.pdf
APT20M34BLL APT20M34SLL 200V 74A 0.034W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switchin
Другие IGBT... APT20M16B2FLL, APT20M16B2LL, APT20M18B2VFR, APT20M18B2VR, APT20M20B2FLL, APT20M20B2LL, APT20M20JFLL, APT20M20JLL, 12N60, APT20M34BLL, APT20M36BFLL, APT20M36BLL, 2SK310, APT20N60BC3, APT30M17JLL, APT30M30B2LL, APT30M30JLL
History: FQA7N60 | RU1H35S | APT20M34BLL | APT30M30JLL | NCE60P18AK
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