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APT20M36BFLL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT20M36BFLL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 325 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 65 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.036 Ohm
   Тип корпуса: TO247

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APT20M36BFLL Datasheet (PDF)

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 apt20m36bfll.pdf

APT20M36BFLL APT20M36BFLL

APT20M36BFLLAPT20M36SFLL200V 65A 0.036WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally f

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 apt20m36bfll.pdf

APT20M36BFLL APT20M36BFLL

isc N-Channel MOSFET Transistor APT20M36BFLLFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV

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APT20M36BFLL APT20M36BFLL

APT20M36BFLLAPT20M36SFLL200V 65A 0.036R POWER MOS 7 FREDFETBFLLPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingD3PAKlosses are addressed with Power MOS 7 by significantly lowering RDS(ON)TO-247and Qg. Power MOS 7 combines lower conduction and switching lossesalon

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 apt20m36bll.pdf

APT20M36BFLL APT20M36BFLL

APT20M36BLLAPT20M36SLL200V 65A 0.036WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switchin

 5.2. Size:375K  inchange semiconductor
 apt20m36bll.pdf

APT20M36BFLL APT20M36BFLL

isc N-Channel MOSFET Transistor APT20M36BLLFEATURESDrain Current I =65A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.036(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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