APT20M36BLL. Аналоги и основные параметры
Наименование производителя: APT20M36BLL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 325 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 65 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12 ns
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.036 Ohm
Тип корпуса: TO247
Аналог (замена) для APT20M36BLL
- подборⓘ MOSFET транзистора по параметрам
APT20M36BLL даташит
apt20m36bll.pdf
APT20M36BLL APT20M36SLL 200V 65A 0.036W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switchin
apt20m36bll.pdf
isc N-Channel MOSFET Transistor APT20M36BLL FEATURES Drain Current I =65A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.036 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur
apt20m36bfllg apt20m36sfllg.pdf
APT20M36BFLL APT20M36SFLL 200V 65A 0.036 R POWER MOS 7 FREDFET BFLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching D3PAK losses are addressed with Power MOS 7 by significantly lowering RDS(ON) TO-247 and Qg. Power MOS 7 combines lower conduction and switching losses alon
apt20m36bfll.pdf
APT20M36BFLL APT20M36SFLL 200V 65A 0.036W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally f
Другие IGBT... APT20M18B2VR, APT20M20B2FLL, APT20M20B2LL, APT20M20JFLL, APT20M20JLL, APT20M34BFLL, APT20M34BLL, APT20M36BFLL, IRFB3607, 2SK310, APT20N60BC3, APT30M17JLL, APT30M30B2LL, APT30M30JLL, APT30M36B2LL, APT30M36JLL, APT30M40B2VR
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