APT30M30JLL - описание и поиск аналогов

 ..1. Size:69K  apt
 apt30m30jll.pdf 

APT30M30JLL 300V 88A 0.030W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "

 5.1. Size:148K  apt
 apt30m30jfll.pdf 

APT30M30JFLL 300V 88A 0.030 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching

 6.1. Size:154K  apt
 apt30m30b2llg apt30m30lllg.pdf 

APT30M30B2LL APT30M30LLL 300V 100A 0.030 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL

 6.2. Size:70K  apt
 apt30m30b2ll.pdf 

APT30M30B2LL APT30M30LLL 300V 100A 0.030W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

 6.3. Size:160K  apt
 apt30m30b2fllg apt30m30lfll.pdf 

APT30M30B2FLL APT30M30LFLL 300V 100A 0.030 R B2FLL POWER MOS 7 FREDFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses

 6.4. Size:376K  inchange semiconductor
 apt30m30b2fll.pdf 

isc N-Channel MOSFET Transistor APT30M30B2FLL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.03 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 6.5. Size:255K  inchange semiconductor
 apt30m30lfll.pdf 

isc N-Channel MOSFET Transistor APT30M30LFLL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.03 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 6.6. Size:376K  inchange semiconductor
 apt30m30b2ll.pdf 

isc N-Channel MOSFET Transistor APT30M30B2LL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.03 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p