APT30M61BLL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT30M61BLL
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 400 W
Предельно допустимое напряжение сток-исток |Uds|: 300 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 54 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 910 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.061 Ohm
Тип корпуса: TO247
Аналог (замена) для APT30M61BLL
APT30M61BLL Datasheet (PDF)
apt30m61bll.pdf
APT30M61BLLAPT30M61SLL300V 54A 0.061WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switchin
apt30m61bll.pdf
isc N-Channel MOSFET Transistor APT30M61BLLFEATURESDrain Current I =54A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.061(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
apt30m61bfllg apt30m61sfllg.pdf
APT30M61BFLLAPT30M61SFLL300V 54A 0.061R POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with
apt30m61bfll.pdf
isc N-Channel MOSFET Transistor APT30M61BFLLFEATURESDrain Current I = 54A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.061(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
apt30m60j.pdf
APT30M60J 600V, 31A, 0.15 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga
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