APT5024SVR. Аналоги и основные параметры
Наименование производителя: APT5024SVR
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 280 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 22 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 470 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
Тип корпуса: D3PAK
Аналог (замена) для APT5024SVR
- подборⓘ MOSFET транзистора по параметрам
APT5024SVR даташит
apt5024svr.pdf
APT5024SVR 500V 22A 0.240 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Leak
apt5024svfrg.pdf
APT5024BVFR APT5024SVFR 500V 22A 0.240 BVFR FREDFET POWER MOS V D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVFR also achieves faster switching speeds through optimized gate layout.
apt5024bll apt5024sll.pdf
APT5024BLL APT5024SLL 500V 22A 0.240 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL along
apt5024sfll apt5024sfllg.pdf
APT5024BFLL APT5024SFLL 500V 22A 0.240 BFLL R POWER MOS 7 FREDFET (B) Power MOS 7 is a new generation of low loss, high voltage, N-Channel D3PAK enhancement mode power MOSFETS. Both conduction and switch- (S) ing losses are addressed with Power MOS 7 by significantly lowering C G E RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along wi
Другие IGBT... APT5014BLL, APT5016BFLL, APT5016BLL, APT5017BLC, APT5018BFLL, APT5018BLL, APT5020BLC, APT5024BFLL, IRF1405, APT5027BVR, APT50M50JFLL, APT50M50JLC, APT50M50L2FLL, APT50M50L2LL, APT50M60L2VFR, APT50M60L2VR, APT50M65B2FLL
History: CEP75N10
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Список транзисторов
Обновления
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