Справочник MOSFET. APT5024SVR

 

APT5024SVR Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APT5024SVR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 280 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 470 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
   Тип корпуса: D3PAK
     - подбор MOSFET транзистора по параметрам

 

APT5024SVR Datasheet (PDF)

 ..1. Size:32K  apt
apt5024svr.pdfpdf_icon

APT5024SVR

APT5024SVR500V 22A 0.240POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementD3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche TestedD Lower Leak

 5.1. Size:113K  apt
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APT5024SVR

APT5024BVFRAPT5024SVFR500V 22A 0.240BVFRFREDFETPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVFRalso achieves faster switching speeds through optimized gate layout.

 6.1. Size:170K  apt
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APT5024SVR

APT5024BLLAPT5024SLL500V 22A 0.240RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong

 6.2. Size:216K  microsemi
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APT5024SVR

APT5024BFLL APT5024SFLL 500V 22A 0.240BFLLR POWER MOS 7 FREDFET (B)Power MOS 7 is a new generation of low loss, high voltage, N-ChannelD3PAKenhancement mode power MOSFETS. Both conduction and switch-(S)ing losses are addressed with Power MOS 7 by significantly lowering CG ERDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along wi

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History: FQP1N50 | NCEP065N10GU

 

 
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