APT50M75B2FLL - описание и поиск аналогов

 ..1. Size:63K  apt
 apt50m75b2fll.pdf 

APT50M75B2FLL APT50M75LFLL 500V 57A 0.075W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptio

 ..2. Size:375K  inchange semiconductor
 apt50m75b2fll.pdf 

isc N-Channel MOSFET Transistor APT50M75B2FLL FEATURES Drain Current I = 57A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.075 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 0.1. Size:165K  apt
 apt50m75b2fllg apt50m75lfllg.pdf 

APT50M75B2FLL APT50M75LFLL 500V 57A 0.075 R B2FLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses

 4.1. Size:68K  apt
 apt50m75b2ll.pdf 

APT50M75B2LL APT50M75LLL 500V 57A 0.075W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s

 4.2. Size:164K  apt
 apt50m75b2llg apt50m75lllg.pdf 

APT50M75B2LL APT50M75LLL 500V 57A 0.075 R B2LL POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses alo

 4.3. Size:375K  inchange semiconductor
 apt50m75b2ll.pdf 

isc N-Channel MOSFET Transistor APT50M75B2LL FEATURES Drain Current I = 57A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.075 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p