Справочник MOSFET. APT6017B2LL

 

APT6017B2LL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT6017B2LL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 760 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.17 Ohm
   Тип корпуса: TMAX

 Аналог (замена) для APT6017B2LL

 

 

APT6017B2LL Datasheet (PDF)

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 apt6017b2ll.pdf

APT6017B2LL APT6017B2LL

APT6017B2LLAPT6017LLL600V 35A 0.170WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi

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 apt6017b2llg apt6017lllg.pdf

APT6017B2LL APT6017B2LL

APT6017B2LLAPT6017LLL600V 35A 0.170RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong

 5.1. Size:162K  apt
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APT6017B2LL APT6017B2LL

APT6017B2FLLAPT6017LFLL600V 35A 0.170B2FLLR POWER MOS 7 FREDFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesL

 5.2. Size:70K  apt
 apt6017b2fll.pdf

APT6017B2LL APT6017B2LL

APT6017B2FLLAPT6017LFLL600V 35A 0.017WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona

 5.3. Size:376K  inchange semiconductor
 apt6017b2fll.pdf

APT6017B2LL APT6017B2LL

isc N-Channel MOSFET Transistor APT6017B2FLLFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.17(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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