APT6029BFLL. Аналоги и основные параметры

Наименование производителя: APT6029BFLL

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 440 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm

Тип корпуса: TO247

Аналог (замена) для APT6029BFLL

- подборⓘ MOSFET транзистора по параметрам

 

APT6029BFLL даташит

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 apt6029bfll.pdf pdf_icon

APT6029BFLL

APT6029BFLL APT6029SFLL 600V 21A 0.290W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

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 apt6029bfll.pdf pdf_icon

APT6029BFLL

isc N-Channel MOSFET Transistor APT6029BFLL FEATURES Drain Current I =21A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.29 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

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 apt6029bfllg apt6029sfllg.pdf pdf_icon

APT6029BFLL

APT6029BFLL APT6029SFLL 600V 21A 0.290 BFLL R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL

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 apt6029bll.pdf pdf_icon

APT6029BFLL

APT6029BLL APT6029SLL 600V 21A 0.290W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

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