APT60M75L2FLL. Аналоги и основные параметры
Наименование производителя: APT60M75L2FLL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 890 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 73 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
|VGSth|ⓘ - Пороговое напряжение включения: 5 V
Qg ⓘ - Общий заряд затвора: 220 nC
tr ⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 1710 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: TO264
Аналог (замена) для APT60M75L2FLL
- подборⓘ MOSFET транзистора по параметрам
APT60M75L2FLL даташит
apt60m75l2fll.pdf
APT60M75L2FLL 600V 73A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds
apt60m75l2fll.pdf
isc N-Channel MOSFET Transistor APT60M75L2FLL FEATURES Drain Current I = 73A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.075 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
apt60m75l2fllg.pdf
APT60M75L2FLL 600V 73A 0.075 R POWER MOS 7 FREDFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally
apt60m75l2llg.pdf
APT60M75L2LL 600V 73A 0.075 R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fa
Другие IGBT... APT6038BLL, APT6040BVFR, APT6040BVR, APT6060BNR, APT60M60JFLL, APT60M60JLL, APT60M75JFLL, APT60M75JLL, 13N50, APT60M75L2LL, APT60M80JVR, APT60M80L2VR, APT77N60JC3, APT8011JFLL, APT8011JLL, APT8014JFLL, APT8014JLL
History: CS3N80FA9
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