APT8014JLL. Аналоги и основные параметры
Наименование производителя: APT8014JLL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 595 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 42 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 1480 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
Тип корпуса: SOT227
Аналог (замена) для APT8014JLL
- подборⓘ MOSFET транзистора по параметрам
APT8014JLL даташит
apt8014jll.pdf
APT8014JLL 800V 42A 0.140W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U
apt8014jfll.pdf
APT8014JFLL 800V 42A 0.140W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with
apt8014l2fll.pdf
APT8014L2FLL 800V 52A 0.140W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds
apt8014l2ll.pdf
APT8014L2LL 800V 52A 0.140W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent w
Другие IGBT... APT60M75L2FLL, APT60M75L2LL, APT60M80JVR, APT60M80L2VR, APT77N60JC3, APT8011JFLL, APT8011JLL, APT8014JFLL, CS150N03A8, APT8014L2FLL, APT8014L2LL, APT8018L2VFR, APT8018L2VR, APT8020B2FLL, APT8020B2LL, APT8020JFLL, APT8020JLL
History: NTMFS6H800N
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Список транзисторов
Обновления
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