APT8020JLL. Аналоги и основные параметры
Наименование производителя: APT8020JLL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 520 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 33 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 17 ns
Cossⓘ - Выходная емкость: 1020 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
Тип корпуса: SOT227
Аналог (замена) для APT8020JLL
- подборⓘ MOSFET транзистора по параметрам
APT8020JLL даташит
apt8020jll.pdf
APT8020JLL 800V 33A 0.200W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U
apt8020jfll.pdf
APT8020JFLL 800V 33A 0.200W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with
apt8020b2ll.pdf
APT8020B2LL APT8020LLL 800V 38A 0.200W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi
apt8020b2fll.pdf
APT8020B2FLL APT8020LFLL 800V 38A 0.200W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona
Другие IGBT... APT8014JLL, APT8014L2FLL, APT8014L2LL, APT8018L2VFR, APT8018L2VR, APT8020B2FLL, APT8020B2LL, APT8020JFLL, 4N60, APT8024B2FLL, APT8024B2LL, APT8024B2VFR, APT8024B2VR, APT8024JFLL, APT8024JLL, APT8043BFLL, APT8043BLL
History: PJX8803
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