Справочник MOSFET. APT8024B2FLL

 

APT8024B2FLL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT8024B2FLL
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 565 W
   Предельно допустимое напряжение сток-исток |Uds|: 800 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 31 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 163 nC
   Время нарастания (tr): 16 ns
   Выходная емкость (Cd): 850 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.24 Ohm
   Тип корпуса: TMAX

 Аналог (замена) для APT8024B2FLL

 

 

APT8024B2FLL Datasheet (PDF)

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 apt8024b2fll.pdf

APT8024B2FLL APT8024B2FLL

APT8024B2FLLAPT8024LFLL800V 31A 0.240WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona

 0.1. Size:245K  microsemi
 apt8024b2fllg apt8024lfllg.pdf

APT8024B2FLL APT8024B2FLL

APT8024B2FLLAPT8024LFLL800V 31A 0.260RB2FLL POWER MOS 7 FREDFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesa

 5.1. Size:39K  apt
 apt8024b2vfr.pdf

APT8024B2FLL APT8024B2FLL

APT8024B2VFRAPT8024LVFR800V 33A 0.240WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical Sp

 5.2. Size:161K  apt
 apt8024b2llg apt8024lllg.pdf

APT8024B2FLL APT8024B2FLL

APT8024B2LLAPT8024LLL800V 31A 0.240RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

 5.3. Size:69K  apt
 apt8024b2ll.pdf

APT8024B2FLL APT8024B2FLL

APT8024B2LLAPT8024LLL800V 31A 0.240WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi

 5.4. Size:137K  apt
 apt8024b2vfrg apt8024lvfrg.pdf

APT8024B2FLL APT8024B2FLL

APT8024B2VFRAPT8024LVFR800V 33A 0.240B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 5.5. Size:37K  apt
 apt8024b2vr.pdf

APT8024B2FLL APT8024B2FLL

APT8024B2VRAPT8024LVR800V 33A 0.240WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specifications

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