APT8024B2LL. Аналоги и основные параметры
Наименование производителя: APT8024B2LL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 565 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 31 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 850 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
Тип корпуса: TMAX
Аналог (замена) для APT8024B2LL
- подборⓘ MOSFET транзистора по параметрам
APT8024B2LL даташит
apt8024b2ll.pdf
APT8024B2LL APT8024LLL 800V 31A 0.240W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi
apt8024b2llg apt8024lllg.pdf
APT8024B2LL APT8024LLL 800V 31A 0.240 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL
apt8024b2fll.pdf
APT8024B2FLL APT8024LFLL 800V 31A 0.240W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona
apt8024b2vfr.pdf
APT8024B2VFR APT8024LVFR 800V 33A 0.240W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical Sp
Другие IGBT... APT8014L2LL, APT8018L2VFR, APT8018L2VR, APT8020B2FLL, APT8020B2LL, APT8020JFLL, APT8020JLL, APT8024B2FLL, IRF1407, APT8024B2VFR, APT8024B2VR, APT8024JFLL, APT8024JLL, APT8043BFLL, APT8043BLL, APT8052BFLL, APT8052BLL
History: AOD32324
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Список транзисторов
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