Справочник MOSFET. APT8052BLL

 

APT8052BLL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT8052BLL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 295 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 390 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.52 Ohm
   Тип корпуса: TO247

 Аналог (замена) для APT8052BLL

 

 

APT8052BLL Datasheet (PDF)

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APT8052BLL
APT8052BLL

APT8052BLLAPT8052SLL800V 15A 0.520WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching

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apt8052bll.pdf

APT8052BLL
APT8052BLL

isc N-Channel MOSFET Transistor APT8052BLLFEATURESDrain Current I =15A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.52(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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apt8052bllg.pdf

APT8052BLL
APT8052BLL

APT8052BLLAPT8052SLL800V 15A 0.520RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)SLLand Qg. Power MOS 7 combines lower conduction and switching lossesalong

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APT8052BLL
APT8052BLL

APT8052BFLLAPT8052SFLL800V 15A 0.520R POWER MOS 7 FREDFETBFLLD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSFLL

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apt8052bfll.pdf

APT8052BLL
APT8052BLL

APT8052BFLLAPT8052SFLL800V 15A 0.520WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fas

 6.3. Size:376K  inchange semiconductor
apt8052bfll.pdf

APT8052BLL
APT8052BLL

isc N-Channel MOSFET Transistor APT8052BFLLFEATURESDrain Current I =15A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.52(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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