2SK3673-01MR
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK3673-01MR
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 80
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 10
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 6
ns
Cossⓘ - Выходная емкость: 140
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.18
Ohm
Тип корпуса:
TO220F
Аналог (замена) для 2SK3673-01MR
-
подбор ⓘ MOSFET транзистора по параметрам
2SK3673-01MR
Datasheet (PDF)
..1. Size:113K fuji
2sk3673-01mr.pdf 
2SK3673-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
..2. Size:280K inchange semiconductor
2sk3673-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3673-01MRFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
8.1. Size:209K 1
2sk3670.pdf 
2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3670 Chopper Regulator and DC-DC Converter Applications Unit: mm 2.5V-Gate Drive Low drain-source ON resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: |Yfs| = 2.1 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 150 V) Enhancement mode: Vth = 0.5~1.3 V (VDS
8.3. Size:111K fuji
2sk3677-01mr.pdf 
2SK3677-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
8.4. Size:264K fuji
2sk3676-01l-01s-01sj.pdf 
2SK3676-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsP4Switching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
8.5. Size:270K fuji
2sk3674-01l-s-sj.pdf 
2SK3674-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsP4Switching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
8.6. Size:116K fuji
2sk3679-01mr.pdf 
2SK3679-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
8.7. Size:114K fuji
2sk3678-01.pdf 
2SK3678-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
8.8. Size:119K fuji
2sk3675-01.pdf 
2SK3675-01200401FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switching11.60.2Low on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
8.9. Size:357K inchange semiconductor
2sk3674-01s.pdf 
isc N-Channel MOSFET Transistor 2SK3674-01SFEATURESDrain Current : I = 7.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
8.10. Size:256K inchange semiconductor
2sk3677-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3677-01MRFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
8.11. Size:283K inchange semiconductor
2sk3674-01l.pdf 
isc N-Channel MOSFET Transistor 2SK3674-01LFEATURESDrain Current : I = 7.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
8.12. Size:357K inchange semiconductor
2sk3676-01sj.pdf 
isc N-Channel MOSFET Transistor 2SK3676-01SJFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
8.13. Size:357K inchange semiconductor
2sk3676-01s.pdf 
isc N-Channel MOSFET Transistor 2SK3676-01SFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
8.14. Size:280K inchange semiconductor
2sk3679-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3679-01MRFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.58(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
8.15. Size:357K inchange semiconductor
2sk3674-01sj.pdf 
isc N-Channel MOSFET Transistor 2SK3674-01SJFEATURESDrain Current : I = 7.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
8.16. Size:290K inchange semiconductor
2sk3678-01.pdf 
isc N-Channel MOSFET Transistor 2SK3678-01FEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.58(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
8.17. Size:346K inchange semiconductor
2sk3675-01.pdf 
isc N-Channel MOSFET Transistor 2SK3675-01FEATURESDrain Current : I = 7.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
8.18. Size:283K inchange semiconductor
2sk3676-01l.pdf 
isc N-Channel MOSFET Transistor 2SK3676-01LFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
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