STT3418 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STT3418
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 5.8 nC
trⓘ - Время нарастания: 11.2 ns
Cossⓘ - Выходная емкость: 69 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.039 Ohm
Тип корпуса: SOT223
STT3418 Datasheet (PDF)
stt3418.pdf
GreenProductSTT3418aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.39 @ VGS=10V30V 5A Surface Mount Package.63 @ VGS=4.5V DD G GDSSTT SERIESS SOT-223ABSOLUTE MAXIMUM RATINGS (TA=25C
stt3414.pdf
GrerrPPrPrProSTT3414aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.33 @ VGS=10VSurface Mount Package.30V 7A 42 @ VGS=4.5V57 @ VGS=2.5VDDDGGGDDSSSTT SERIESSSOT-223(
stt3434n.pdf
STT3434N 6 A, 30 V, RDS(ON) 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density trench process to provide Low RDS(on) ELand to ensure minimal power loss and heat dissipation. 6 5 4 Typical
stt3490n.pdf
STT3490N N-Channel Enhancement Mode Mos.FET 1.2 A, 150 V, RDS(ON) 700 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free KEY FEATURES TSOP-6 Low RDS(on) trench technology. AE Low thermal impedance. L Fast switching speed. 6 5 4TYPICAL APPLICATIONS B White LED boost converters. Automotive S
stt3458n.pdf
STT3458N 3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize AHigh Cell Density process. Low RDS(on) assures minimal ELpower loss and conserves energy, making this device 6 5 4ideal for use
stt3405p.pdf
STT3405P -4.9 A, -20 V, RDS(ON) 56 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density process. Low RDS(on) assures minimal ELpower loss and conserves energy, making this device 6 5 4 ideal fo
stt3402n.pdf
STT3402N 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize High Cell Density AE process. Low RDS(on) assures minimal power loss and conserves energy, L making this device ideal for use in powe
stt3470n.pdf
STT3470N 2.2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a High Cell Density trench process to provide Low RDS(on) ELand to ensure minimal power loss and heat dissipation. 6 5 4 Typ
stt3457p.pdf
STT3457P -4 A, -30 V, RDS(ON) 60 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density trench process to provide Low RDS(on) ELand to ensure minimal power loss and heat dissipation. 6 5 4 Typica
stt3423p.pdf
STT3423P -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6These miniature surface mount MOSFETs utilize a high cell density Atrench process to provide low RDS(on) and to ensure minimal power ELloss and heat dissipation. Typical applica
stt3471p.pdf
STT3471P -2A, -100V, RDS(ON) 350 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize Aa high cell density trench process to provide Low RDS(on) ELand to ensure minimal power loss and heat dissipation. 6 5 4FEATURES
stt3463p.pdf
STT3463P -3 A, -60 V, RDS(ON) 155 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density process. Low RDS(on) assures minimal ELpower loss and conserves energy, making this device 6 5 4 ideal
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918