STM4806 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STM4806
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 23 nC
Время нарастания (tr): 34 ns
Выходная емкость (Cd): 242 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0075 Ohm
Тип корпуса: SO-8
STM4806 Datasheet (PDF)
stm4806.pdf
GreenProductSTM4806aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.7.5 @ VGS=10VSuface Mount Package.30V 15A9.9 @ VGS=4.5V D 5 4 G6 3D S7 2 SDSO-8D 8 1S1ABSOLUTE MAXIMUM RATINGS (TA=
stm4808.pdf
SamHop Selection Guide - Mosfet ProductN Channel ProductRds(on) / m Ohm max Qg (nC)Vgs PD Vgs(th) Ciss Coss Crss Qgs QgdPart No. Package Configuration Vds ID ESD() (W) (typ) (pf) (pF) (pF) (nC) (nC)10V 4.5V 4.0V 3.7V 3.1V 2.5V 10V 4.5V 4.0V 2.5VSTM4800S SOP8 Single-N 30 20 8.0 2.50 20.0 28.0 1.70 820 177 60 15.0 7.7 2.20 4.70STM4820 SOP8 Single-N 30 20 8.9 2.50 21.0 30.0 1.70
stm4800s.pdf
S TM4800SS amHop Microelectronics C orp.J un.07 2006N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.20 @ VGS = 10V30V 8ASurface Mount Package.28 @ VGS =4.5VSO-81ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)Limit UnitP
stm4884a.pdf
S T M4884AS amHop Microelectronics C orp. Dec 28 2004 ver1.1 N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) typ R ugged and reliable.6 @ V G S = 10V30V 12AS urface Mount Package.8.5 @ V G S = 4.5VS O-81ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwis
stm4880.pdf
STM4880aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17 @ VGS=10VSuface Mount Package.30V 9.6A26 @ VGS=4.5VESD Protected.D 5 4 G6 3D S7 2D SS O-88 1D S1(TA=25C unless otherwise noted)ABSOLU
stm4886e.pdf
GreenProductSTM4886EaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.5 @ VGS=10VSuface Mount Package.30V 17.8A7.5 @ VGS=4.5VESD Protected.D 5 4 GD 6 3S7 2D SS O-88 1D S1(TA=25C unless other
stm4884.pdf
GrerrPPrPrProSTM4884SamHop Micrpelectronics Corp.Ver 3.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m ) TypRugged and reliable.5.5 @VGS=10VSuface Mount Package.30V 13A8.5 @VGS=4.5VD 5 4 G6 3D S7 2D SSO-8D 8 1S1(TA=25C unless otherwise
stm4820.pdf
GreenProductSTM4820aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.21 @ VGS=10VSuface Mount Package.30V 8.9A30 @ VGS=4.5VESD Protected.D 5 4 G6 3D S7 2D SS O-88 1D S1(TA=25C unless otherwi
stm4886.pdf
GreenProductSTM4886aS mHop Microelectronics C orp.Ver 3.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.3.5 @ VGS=10VSuface Mount Package.30V 18A5.4 @ VGS=4.5V D 5 4 G6 3D S7 2 SDSO-88 1SD1ABSOLUTE MAXIMUM RATINGS (TA=25C unle
stm4840.pdf
GreenProductSTM4840aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17 @ VGS=10VSuface Mount Package.30V 9A28 @ VGS=4.5V D 5 4 G6 3D S7 2 SDSO-8D 8 1S1ABSOLUTE MAXIMUM RATINGS (TA=25
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
