STG8211 - аналоги, параметры транзистора - Справочник транзисторов

STG8211 даташит

..1. Size:129K samhop
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Green Product S TG 8211 S amHop Microelectronics C orp. J uly. 03. 2006 R ev1.2 Dual N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 13.5 @ VGS =4.0V 20V 10A Surface Mount Package. 18 @ VGS =2.5V ESD Protected. D1 D2 TSSOP 1 8 D1/D2 D1/D2 2 7

9.1. Size:124K samhop
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Green r r P Pr Pr Product STG8209 a S mHop Microelectronics C orp. Ver 2.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 26 @ VGS=4.0V Suface Mount Package. 20V 6A ESD Protected. 40 @ VGS=2.5V ( 1 ) D2( 8 ) D1 TSSOP 1 8 D1/D2 D1/D2 ( 5 ) G2

9.2. Size:192K samhop
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Green Product STG8205 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 26 @ VGS=4.5V Suface Mount Package. 20V 6A 35 @ VGS=2.5V D1 D2 TS S OP 1 8 D1/D2 D1/D2 2 7 S 1 S 2 G 1 G 2 3 6 S 1 S 2 4 5 G 2 G 1

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