S T U/D1955NLS amHop Microelectronics C orp. Arp,12 2005 ver1.2N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S IDR DS (ON) ( m W ) MaxR ugged and reliable.55 @ V G S = 10V55V 10ATO-252 and TO-251 Package.80 @ V G S = 4.5VDDGSGS TU S E R IE S S TD S E R IE STO-252AA

STD19NE06LN-CHANNEL 60V - 0.038 - 19A IPAK/DPAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD19NE06L 60 V

STB19NF20, STD19NF20STF19NF20, STP19NF20DatasheetN-channel 200 V, 0.11 , 15 A, MESH OVERLAY Power MOSFETs in D2PAK, DPAK, TO220FP and TO-220 packagesFeaturesTABTAB32 VDS RDS(on) max. IDType Package311DPAK2D PAKSTB19NF20D2PAKTABSTD19NF20 DPAK200 V 0.16 15 ASTF19NF20 TO-220FP3231STP19NF20 TO-22021TO-220TO-220FP Extremel

STD19NE06N-CHANNEL 60V - 0.042 - 19A IPAK/DPAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD19NE06 60 V

STB19NF20, STD19NF20, STF19NF20, STP19NF20N-channel 200 V, 0.11 typ., 15 A MESH OVERLAY Power MOSFET in DPAK, DPAK, TO-220FP and TO-220 packagesDatasheet production dataFeaturesTABTABRDS(on) Type VDS ID PTOTmax.33STB19NF20 200 V 0.16 15 A 90 W11DPAK DPAKSTD19NF20 200 V 0.16 15 A 90 WTABSTF19NF20 200 V 0.16 15 A 25 WSTP19NF20 200