Справочник MOSFET. SP8006

 

SP8006 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SP8006
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.67 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 24 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 139 ns
   Cossⓘ - Выходная емкость: 422 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: TSON3.3X3.3

 Аналог (замена) для SP8006

 

 

SP8006 Datasheet (PDF)

 ..1. Size:114K  samhop
 sp8006.pdf

SP8006 SP8006

GreenProductSP8006aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.4.5 @ VGS=4.5VSuface Mount Package.4.7 @ VGS=4.0V 24V 12.5A 4.9 @ VGS=3.7V ESD Protected.5.5 @ VGS=3.1V6.0 @ VGS=2.5VD 5 4 GD 6 3S7 2D

 9.1. Size:113K  samhop
 sp8009el.pdf

SP8006 SP8006

GreenProductSP8009ELaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.5.0 @ VGS=10VSuface Mount Package.33V 24A6.5 @ VGS=6V ESD Protected.D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3ABSOLUTE MAX

 9.2. Size:115K  samhop
 sp8007.pdf

SP8006 SP8006

GreenProductSP8007aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.3.8 @ VGS=4.5VSuface Mount Package.3.9 @ VGS=4.0V 24V 27A 4.6 @ VGS=3.7V ESD Protected.5.1 @ VGS=3.1V5.9 @ VGS=2.5VD 5 4 GD 6 3S7 2D S

 9.3. Size:114K  samhop
 sp8009e.pdf

SP8006 SP8006

GreenProductSP8009EaS mHop Microelectronics C orp.Ver 1.5N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.5.0 @ VGS=10VSuface Mount Package.33V 24A6.5 @ VGS=6V ESD Protected.D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3ABSOLUTE MAXI

 9.4. Size:80K  samhop
 sp8009.pdf

SP8006 SP8006

GreenProductSP8009aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.6.0 @ VGS=10VSuface Mount Package.30V 24A7.2 @ VGS=6V Pin 1TSON 3.3 x 3.3ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)SymbolP

 9.5. Size:115K  samhop
 sp8005.pdf

SP8006 SP8006

GreenProductSP8005aS mHop Microelectronics C orp.Ver 2.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.3.5 @ VGS=4.5VSuface Mount Package.3.7 @ VGS=4.0V 20V 32A 3.9 @ VGS=3.7V ESD Protected.4.3 @ VGS=3.1V5.0 @ VGS=2.5VD 5 4 GD 6 3S7 2D S

 9.6. Size:112K  samhop
 sp8008.pdf

SP8006 SP8006

GreenProductSP8008aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.3.9 @ VGS=10VSuface Mount Package.30V 28A 4.2 @ VGS=4.5V ESD Protected.5.2 @ VGS=2.5V D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3

 9.7. Size:770K  huashuo
 hsp8004.pdf

SP8006 SP8006

HSP8004 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DSThe HSP8004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 3.1 m DS(ON),TYPgate charge for most of the synchronous buck converter applications. I 175 A DThe HSP8004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

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