FDP070AN06A0 - описание и поиск аналогов

October 2013 FDP070AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 7 m Applications Features RDS(on) = 6.1 m (Typ.) @ VGS = 10 V, ID = 80 A Synchronous Rectification for ATX / Server / Telecom PSU Qg(tot) = 51 nC (Typ.) @ VGS = 10 V Battery Protection Circuit Low Miller Charge Motor Drives and Uninterruptible Power Supplies Low Qrr Body Diode UIS

March 2003 FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7m Features Applications rDS(ON) = 6.1m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 51nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

December 2013 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge s

October 2012 FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5m Features Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc

December 2013 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge s

March 2015 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge