Справочник MOSFET. FQP9N50C

 

FQP9N50C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQP9N50C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 135 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 65 ns
   Cossⓘ - Выходная емкость: 130 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для FQP9N50C

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQP9N50C Datasheet (PDF)

 ..1. Size:1341K  fairchild semi
fqp9n50c.pdfpdf_icon

FQP9N50C

April 2014FQP9N50CN-Channel QFET MOSFET500 V, 9 A, 800 m DescriptionFeaturesThese N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 m (Max.) @ VGS = 10 V,transistors are produced using Fairchild s proprietary, ID = 4.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tailored to minim

 ..2. Size:845K  fairchild semi
fqp9n50c fqpf9n50c.pdfpdf_icon

FQP9N50C

TMQFETFQP9N50C/FQPF9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to

 7.1. Size:709K  fairchild semi
fqp9n50.pdfpdf_icon

FQP9N50C

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been e

 9.1. Size:757K  fairchild semi
fqp9n15.pdfpdf_icon

FQP9N50C

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 150V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been espe

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History: IRFP343R | BRI5N50 | FCPF360N65S3R0L | IPP120N10S4-03 | APM1105NU | SQP50P03-07 | NTP082N65S3F

 

 
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