FDI045N10A
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDI045N10A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 263
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 120
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 54
nC
trⓘ -
Время нарастания: 26
ns
Cossⓘ - Выходная емкость: 925
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045
Ohm
Тип корпуса:
TO262
I2PAK
Аналог (замена) для FDI045N10A
FDI045N10A
Datasheet (PDF)
..1. Size:750K fairchild semi
fdp045n10a f102 fdi045n10a f102.pdf 
July 2011FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mFeatures Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superio
..2. Size:710K fairchild semi
fdp045n10a fdi045n10a.pdf 
November 2013FDP045N10A / FDI045N10AN-Channel PowerTrench MOSFET100 V, 164 A, 4.5 mFeatures Description RDS(on) = 3.8 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while main-taining superior switching
..3. Size:710K fairchild semi
fdi045n10a fdp045n10a.pdf 
November 2013FDP045N10A / FDI045N10AN-Channel PowerTrench MOSFET100 V, 164 A, 4.5 mFeatures Description RDS(on) = 3.8 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while main-taining superior switching
..4. Size:647K onsemi
fdp045n10a fdi045n10a.pdf 
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.1. Size:595K fairchild semi
fdi040n06.pdf 
November 2009FDI040N06N-Channel PowerTrench MOSFET 60V, 168A, 4.0mFeatures General Description RDS(on) = 3.2m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching p
9.2. Size:602K fairchild semi
fdi047an08a0.pdf 
June 2004FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0N-Channel PowerTrench MOSFET75V, 80A, 4.7mFeatures Applications rDS(ON) = 4.0m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Sys
9.3. Size:606K fairchild semi
fdp047an08a0 fdi047an08a0 fdh047an08a0.pdf 
June 2004FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0N-Channel PowerTrench MOSFET75V, 80A, 4.7mFeatures Applications rDS(ON) = 4.0m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Sys
9.4. Size:255K inchange semiconductor
fdi040n06.pdf 
isc N-Channel MOSFET Transistor FDI040N06FEATURESDrain Current I = 168A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.5. Size:255K inchange semiconductor
fdi047an08a0.pdf 
isc N-Channel MOSFET Transistor FDI047AN08A0FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
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