FDP150N10A - Даташиты. Аналоги. Основные параметры

July 2011FDP150N10A_F102tmN-Channel PowerTrench MOSFET 100V, 50A, 15mFeatures Description RDS(on) = 12.5m ( Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performa

November 2013FDP150N10AN-Channel PowerTrench MOSFET100 V, 50 A, 15 mFeatures Description RDS(on) = 12.5 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switching Speedlored to minimize the on-state resistance while maintainingsuperior switching performance.

July 2008FDP150N10tmN-Channel PowerTrench MOSFET 100V, 57A, 15mFeatures General Description RDS(on) = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching per

isc N-Channel MOSFET Transistor FDP150N10FEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 15m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

August 2003FDH15N50 / FDP15N50 / FDB15N5015A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple DriveSwitch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON)

August 2003FDH15N50 / FDP15N50 / FDB15N5015A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple DriveSwitch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON)

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

October 2008UniFETTMFDP15N40 / FDPF15N40tmN-Channel MOSFET 400V, 15A, 0.3Features Description RDS(on) = 0.24 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 28nC)stripe, DMOS technology. Low Crss ( Typ. 17pF)This advanced technology has

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia