FDMA8884 - Даташиты. Аналоги. Основные параметры
Наименование производителя: FDMA8884
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 1 ns
Cossⓘ - Выходная емкость: 132 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
Тип корпуса: MICROFET2X2
Аналог (замена) для FDMA8884
FDMA8884 Datasheet (PDF)
fdma8884.pdf

May 2014FDMA8884Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 6.0 Abeen optimized for rDS(on) switching performance. High performance trenc
fdma8878.pdf

May 2014FDMA8878Single N-Channel Power Trench MOSFET30 V, 9.0 A, 16 mFeatures General Description Max rDS(on) = 16 m at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 19 m at VGS = 4.5 V, ID = 8.5 Abeen optimized for rDS(on), switching performance. High performance trenc
fdma8051l.pdf

January 2014FDMA8051LSingle N-Channel PowerTrench MOSFET40 V, 10 A, 14 mFeatures General Description Max rDS(on) = 14 m at VGS = 10 V, ID = 10 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 18 m at VGS = 4.5 V, ID = 8.5 Alow rDS(on) and gate charge provide excellent switching per
fdma86251.pdf

March 2015FDMA86251Single N-Channel PowerTrench MOSFET150 V, 2.4 A, 175 mFeatures General Description Max rDS(on) = 175 m at VGS = 10 V, ID = 2.4 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 237 m at VGS = 6 V, ID = 2.0 Alow rDS(on) and gate charge provide excellent switching
Другие MOSFET... FDD13AN06F085 , FDMS039N08B , FDT86256 , FDI045N10A , FDP045N10A , FDP150N10A , FDP020N06B , FDP027N08B , K3569 , FDC8878 , FDC8884 , FDZ661PZ , FDZ663P , FDMC86320 , FDD8424HF085A , FDMS86320 , FDD5N60NZ .



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