FDMS8020 - параметры транзистора MOSFET, его аналоги, datasheet

FDMS8020 Datasheet (PDF)

..1. Size:258K fairchild semi
fdms8020.pdf pdf_icon

November 2011FDMS8020N-Channel PowerTrench MOSFET 30 V, 42 A, 2.5 mFeatures General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 26 AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.6 m at VGS = 4.5 V, ID = 21.5 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced P

7.1. Size:289K fairchild semi
fdms8026s.pdf pdf_icon

August 2010FDMS8026SN-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 mFeatures General DescriptionThe FDMS8026S has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 Apackage technologies have been combined to offer the lowest Adv

7.2. Size:281K fairchild semi
fdms8025s.pdf pdf_icon

August 2010FDMS8025SN-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.8 mFeatures General DescriptionThe FDMS8025S has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 Apackage technologies have been combined to offer the lowest rDS(

7.3. Size:286K fairchild semi
fdms8027s.pdf pdf_icon

August 2010FDMS8027SN-Channel PowerTrench SyncFETTM 30 V, 22 A, 5.0 mFeatures General DescriptionThe FDMS8027S has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 Apackage technologies have been combined to offer the lowest Adv