FDB024N08BL7 - аналоги, параметры транзистора

FDB024N08BL7 даташит

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June 2014 FDB024N08BL7 N-Channel PowerTrench MOSFET 80 V, 229 A, 2.4 m Features Description RDS(on) = 1.7 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Low FOM RDS(on) *QG tailored to minimize the on-state resistance while maintaining superior switching performance.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fdb024n06.pdf pdf_icon

July 2008 FDB024N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.4m Features General Description RDS(on) = 1.8m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

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fdb024n04al7.pdf pdf_icon

August 2010 FDB024N04AL7 N-Channel PowerTrench MOSFET 40V, 219A, 2.4m Features Description RDS(on) = 2.0m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet Low Gate Charge maintain superior s