FDMC8321L - Даташиты. Аналоги. Основные параметры

February 2013FDMC8321LN-Channel Power Trench MOSFET 40 V, 49 A, 2.5 mFeatures General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 22 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 4.5 V, ID = 18 Aringing of DC/DC converters using either synchronous or Advanced

December 2014FDMC8321LDCN-Channel Power Trench MOSFET40 V, 108 A, 2.5 mFeatures General Description Dual CoolTM Top Side Cooling PQFN packageThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.5 m at VGS = 10 V, ID = 27 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.1 m at VGS = 4.

October 2013FDMC8327LN-Channel PowerTrench MOSFET 40 V, 14 A, 9.7 m Features General Description Max rDS(on) = 9.7 m at VGS = 10 V, ID = 12 AThis N-Channel MOSFET is produced using FairchildSemiconductors advanced Power Trench process that has Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 10 Abeen especially tailored to minimize the on-state resistance and Low Pro

June 2013FDMC8360LN-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 2.1 m at VGS = 10 V, ID = 27 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 3.1 m