Справочник MOSFET. FDMC8321L

 

FDMC8321L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMC8321L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6.1 ns
   Cossⓘ - Выходная емкость: 1000 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm
   Тип корпуса: PQFN3.3X3.3

 Аналог (замена) для FDMC8321L

 

 

FDMC8321L Datasheet (PDF)

 ..1. Size:263K  fairchild semi
 fdmc8321l.pdf

FDMC8321L FDMC8321L

February 2013FDMC8321LN-Channel Power Trench MOSFET 40 V, 49 A, 2.5 mFeatures General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 22 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 4.5 V, ID = 18 Aringing of DC/DC converters using either synchronous or Advanced

 0.1. Size:561K  fairchild semi
 fdmc8321ldc.pdf

FDMC8321L FDMC8321L

December 2014FDMC8321LDCN-Channel Power Trench MOSFET40 V, 108 A, 2.5 mFeatures General Description Dual CoolTM Top Side Cooling PQFN packageThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.5 m at VGS = 10 V, ID = 27 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.1 m at VGS = 4.

 7.1. Size:290K  fairchild semi
 fdmc8327l.pdf

FDMC8321L FDMC8321L

October 2013FDMC8327LN-Channel PowerTrench MOSFET 40 V, 14 A, 9.7 m Features General Description Max rDS(on) = 9.7 m at VGS = 10 V, ID = 12 AThis N-Channel MOSFET is produced using FairchildSemiconductors advanced Power Trench process that has Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 10 Abeen especially tailored to minimize the on-state resistance and Low Pro

 8.1. Size:367K  fairchild semi
 fdmc8360l.pdf

FDMC8321L FDMC8321L

June 2013FDMC8360LN-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 2.1 m at VGS = 10 V, ID = 27 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 3.1 m

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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