Справочник MOSFET. FDMS3624S

 

FDMS3624S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDMS3624S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 17.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 2 ns
   Cossⓘ - Выходная емкость: 448 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: PQFN5X6
 

 Аналог (замена) для FDMS3624S

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDMS3624S Datasheet (PDF)

 ..1. Size:389K  fairchild semi
fdms3624s.pdfpdf_icon

FDMS3624S

December 2011FDMS3624SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

 7.1. Size:397K  fairchild semi
fdms3622s.pdfpdf_icon

FDMS3624S

December 2011FDMS3622SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

 7.2. Size:388K  fairchild semi
fdms3626s.pdfpdf_icon

FDMS3624S

December 2011FDMS3626SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

 7.3. Size:368K  fairchild semi
fdms3620s.pdfpdf_icon

FDMS3624S

July 2012FDMS3620SPowerTrench PowerStage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 4.7 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.5 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and routing

Другие MOSFET... FDB024N08BL7 , FDMS86250 , FDMS86540 , FDMS3626S , FDMC8010 , FDMC8321L , FDMS86520 , FDMS3622S , IRLB4132 , FDD86113LZ , FDMS8320L , FDMS86500DC , FDMS8558S , FDMS8560S , FDMS8570S , FDMS3660S , FDMS3664S .

History: CS360 | B0210D | IRLML0030TRPBF | FDMS039N08B | FCPF400N80Z | HY3810M | KIA2301

 

 
Back to Top

 


 
.